CGD65A055S2-T07 Single FETs, MOSFETs_BOSICHUANG_ Relay_ Integrated Circuit IC_Connector_ Transformer_ Transisto_ Xilinx

CGD65A055S2-T07

Product_Category

Single FETs, MOSFETs

Manufacturer

Cambridge GaN Devices

Type

650V GAN HEMT, 55MOHM, DFN8X8. W

Encapsulation

Packages

Tape & Reel (TR)

RoHS

YES

Price

$9.5400

Specifications

PDF(1)

TYPE	DESCRIPTION
Mfr	Cambridge GaN Devices
Series	ICeGaN™
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	16-PowerVDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Rds On (Max) @ Id, Vgs	77mOhm @ 2.2A, 12V
FET Feature	Current Sensing
Vgs(th) (Max) @ Id	4.2V @ 10mA
Supplier Device Package	16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)	12V
Vgs (Max)	+20V, -1V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 12 V

$3.6700

$11.4200

$8.8600

$30.0600

$1.7000