CGD65B130S2-T13 Single FETs, MOSFETs_BOSICHUANG_ Relay_ Integrated Circuit IC_Connector_ Transformer_ Transisto_ Xilinx

CGD65B130S2-T13

Product_Category

Single FETs, MOSFETs

Manufacturer

Cambridge GaN Devices

Type

650V GAN HEMT, 130MOHM, DFN5X6.

Encapsulation

Packages

Tape & Reel (TR)

RoHS

YES

Price

$6.4200

Specifications

PDF(1)

TYPE	DESCRIPTION
Mfr	Cambridge GaN Devices
Series	ICeGaN™
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerVDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Rds On (Max) @ Id, Vgs	182mOhm @ 900mA, 12V
FET Feature	Current Sensing
Vgs(th) (Max) @ Id	4.2V @ 4.2mA
Supplier Device Package	8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)	9V, 20V
Vgs (Max)	+20V, -1V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	2.3 nC @ 12 V

$3.6700

$11.4200

$8.8600

$30.0600

$1.7000